Product Datasheet Search Results:
- SPI07N60C3
- Infineon Technologies
- MOSFET N-CH 650V 7.3A TO-262 - SPI07N60C3
- SPI07N60C3 SMD
- Infineon Technologies
- CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.60 ?, 7.3A
- SPI07N60C3XKSA1
- Infineon Technologies
- MOSFET N-Ch 650V 7.3A I2PAK-3 MOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS C3
- SPI07N60C3
- N/a
- Cool MOS Power Amp., 650V 7.3A 83W, MOS-FET N-Channel enhanced
Product Details Search Results:
Infineon.com/SPI07N60C3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-262-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.9V @ 350\u00b5A","Input Capacitance (Ciss) @ Vds":"790pF @ 25V","Series":"CoolMOS\u2122","Standard Package":"500","Supplier Device Package":"PG-TO262-3-1","Product Training Modules":"CoolMOS\u2122 CP High Voltage MOSFETs Converters","Datasheets":"SPP/SPI/SPA07N60C3","Rds On (Max) @ Id, Vgs":"600 mOhm @ 4.6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packa...
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Infineon.com/SPI07N60C3HKSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"3.5 ns","Typical Turn-Off Delay Time":"60 ns","Description":"Value","Maximum Continuous Drain Current":"7.3 A","Package":"3TO-262","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"6 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"600@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"7 ns"}...
1520 Bytes - 02:06:50, 15 November 2024
Infineon.com/SPI07N60C3XKSA1
1022 Bytes - 02:06:50, 15 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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SPI07N60C3.pdf | 0.61 | 1 | Request |