Datasheet.Directory

{"Category":"Power MOSFET","Dimensions":"10.414 x 9.652 x 4.826 mm","Maximum Continuous Drain Current":"-95 A","Width":"9.652 mm","Maximum Drain Source Voltage":"-60 V","Package Type":"TO-263","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"230 nC @ -10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"20 ns","Channel Type":"P","Typical Input Capacitance @ Vds":"11400 pF @ -25 V","Length...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"11400pF @ 25V","Series":"TrenchFET\u00ae","Standard Package":"800","Supplier Device Package":"TO-263 (D2Pak)","Datasheets":"SUM110P06-07L","Rds On (Max) @ Id, Vgs":"6.9 mOhm @ 30A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Turn-Off Delay Time":"200 ns","Description":"Value","Maximum Continuous Drain Current":"110 A","Package":"3TO-263","Typical Turn-On Delay Time":"20 ns","Mounting":"Surface Mount","Typical Rise Time":"160 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"6.9@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"Vishay / Siliconix","Typical Fall Time":"240 ns"}...