Product Datasheet Search Results:
6 Pages, 262 KB, Original- TK10A60D(Q)
- Toshiba
- Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS
Product Details Search Results:
Toshiba.co.jp/TK10A60D(Q)
{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"22 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"3TO-220SIS","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b130 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"750@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"15 ns"}...
1241 Bytes - 12:42:55, 17 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TK10A60D.pdf | 0.18 | 1 | Request |
