Product Datasheet Search Results:
9 Pages, 260 KB, Original- TPCA8080
- Toshiba America Electronic Components, Inc.
- 42 A, 30 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/TPCA8080
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"229 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0032 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"126 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor ...
1512 Bytes - 08:39:15, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TPCA8080.pdf | 0.25 | 1 | Request |
