Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-21F1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"35","Collector-emitter Voltage-Max":"160 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"18 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"R...

{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"30 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Factory Pack Quantity":"100","Brand":"Toshiba","DC Current Gain hFE Max":"160","Collector-Emitter Saturation Voltage":"2 V","Collector- Emitter Voltage VCEO Max":"160 V","Packaging":"Bulk","Collector- Base Voltage VCBO":"160 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"180 W","Maximum DC Collector Current":"18 A","Configuration":"Triple","Maximu...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"18A","Transistor Type":"NPN","Frequency - Transition":"30MHz","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 900mA, 9A","Series":"-","Package / Case":"TO-3PL","Voltage - Collector Emitter Breakdown (Max)":"160V","Power - Max":"180W","Packaging":"Bulk","Datasheets":"TTC0002 -","Current - Collector Cutoff (Max)":"-","Supplier Device Package":"TO-3P(L)","Standard Package":"100","Mounting Type":"Through ...