Product Datasheet Search Results:
5 Pages, 306 KB, Original- JANTX2N3810
- Microchip Technology
- Trans GP BJT PNP 60V 0.05A 350mW 6-Pin TO-78 Bag
4 Pages, 119 KB, Original- JANTX2N3810
- Microsemi
- Bipolar Transistors - BJT
5 Pages, 306 KB, Original- JANTX2N3810L
- Microsemi Corp.
- 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
5 Pages, 306 KB, Original- JANTX2N3810U
- Microsemi Corp.
- 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
1 Pages, 27 KB, Scan- JANTX2N3810
- National Semiconductor
- Pro-Electron Transistor Datasheets
Product Details Search Results:
Calogic.net/X2N3810
{"@I(C) (A) (Test Condition)":"1.0m","I(CBO) Max. (A)":"10u","Number of Devices":"2","Type (NPN/PNP)":"PNP","h(FE) Max. Current gain.":"450","h(FE) Min. Static Current Gain":"150","@V(CE) (V) (Test Condition)":"5.0","P(D) Max.(W) Power Dissipation":"0.6","V(BR)CEO (V)":"60","Semiconductor Material":"Silicon","@V(CBO) (V) (Test Condition)":"50","Military":"N","V(BR)CBO (V)":"60","Package":"Chip","I(C) Abs.(A) Collector Current":"50m","Emitter-Base Diode (Y/N)":"No"}...
935 Bytes - 13:09:10, 16 November 2024
Calogic.net/X2N3810A
{"@I(C) (A) (Test Condition)":"1.0m","I(CBO) Max. (A)":"10u","Number of Devices":"2","Type (NPN/PNP)":"PNP","h(FE) Max. Current gain.":"450","h(FE) Min. Static Current Gain":"150","@V(CE) (V) (Test Condition)":"5.0","P(D) Max.(W) Power Dissipation":"0.6","V(BR)CEO (V)":"60","Semiconductor Material":"Silicon","@V(CBO) (V) (Test Condition)":"50","Military":"N","V(BR)CBO (V)":"60","Package":"Chip","I(C) Abs.(A) Collector Current":"50m","Emitter-Base Diode (Y/N)":"No"}...
940 Bytes - 13:09:10, 16 November 2024
Microchip.com/JANTX2N3810
1062 Bytes - 13:09:10, 16 November 2024
Microsemi.com/JANTX2N3810
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"2 PNP (Dual)","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"250mV @ 100\u00b5A, 1mA","Series":"Military, MIL-PRF-19500/336","Package / Case":"TO-78-6 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"350mW","Packaging":"Bulk","Datasheets":"2N3810-11(L,U)","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Supplier Devic...
1519 Bytes - 13:09:10, 16 November 2024
Microsemi.com/JANTX2N3810L
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"2 PNP (Dual)","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"250mV @ 100\u00b5A, 1mA","Series":"Military, MIL-PRF-19500/336","Package / Case":"TO-78-6 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"350mW","Packaging":"Bulk","Datasheets":"2N3810-11(L,U)","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Supplier Devic...
1520 Bytes - 13:09:10, 16 November 2024
Microsemi.com/JANTX2N3810U
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"2 PNP (Dual)","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"250mV @ 100\u00b5A, 1mA","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Series":"Military, MIL-PRF-19500/336","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-78-6","Packaging":"Bulk","Datasheets":"2N3810-11(L,U)","Power - Max":"...
1522 Bytes - 13:09:10, 16 November 2024
Semicoa.com/JANTX2N3810
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-8","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.0500 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"GENERAL PURPOSE ...
1270 Bytes - 13:09:10, 16 November 2024
Semicoa.com/JANTX2N3810L
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-8","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.0500 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Number of Elements":"2","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL",...
1235 Bytes - 13:09:10, 16 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 3N3810.pdf | 0.07 | 1 | Request |
