Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"650 mOhm @ 270mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 2.7\u00b5A","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS670S2LINCT BSS670S2LXTINCT BSS670S2LXTINCT-ND","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS670S2L","Power - Max":"360mW","Package / Case":"TO-2...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 2.7\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"540mA (Ta)","Gate Charge (Qg) @ Vgs":"2.26nC @ 10V","Product Photos":"SOT-23-3","PCN Design/Specification":"Die Orientation Update 25/Aug/2015","Rds On (Max) @ Id, Vgs":"650 mOhm @ 270mA, 10V","Datasheets":"BSS670S2L","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Carrier Tape Update 03/J...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5400 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Transistor Application":"SWIT...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"25 ns","Typical Turn-Off Delay Time":"21 ns","Description":"Value","Maximum Continuous Drain Current":"0.54 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"9 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"650@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"24 ns"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"55 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"2.26 nC","Package / Case":"SOT-23-3","Part # Aliases":"BSS670S2LH6327XTSA1 SP000928950","Fall Time":"32 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"540 mA","Rds On - Drai...

{"Product Category":"MOSFET","Series":"BSS670S2","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...

{"Packaging":"Reel","Brand":"Infineon Technologies","Product Category":"MOSFET","Part # Aliases":"SP001341854","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"650 mOhm @ 270mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 2.7\u00b5A","Series":"OptiMOS\u2122","Standard Package":"3,000","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS670S2LL6327HTSA1 SP000247301","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS670S2L","Power - Max":"360mW","Package / Case":"TO-236-3, SC-5...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5400 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...