Product Datasheet Search Results:
9 Pages, 538 KB, Original- BSZ12DN20NS3G
- Infineon Technologies Ag
- 11.3 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 538 KB, Original- BSZ12DN20NS3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP
Product Details Search Results:
Infineon.com/BSZ12DN20NS3G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"8-TSDSON","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 25\u00b5A","Input Capacitance (Ciss) @ Vds":"680pF @ 100V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TSDSON-8 (3.3x3.3)","Datasheets":"BSZ12DN20NS3G","Rds On (Max) @ Id, Vgs":"125 mOhm @ 5.7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Ma...
1860 Bytes - 05:22:45, 18 January 2026
Infineon.com/BSZ12DN20NS3GATMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"4 ns","Typical Turn-Off Delay Time":"10 ns","Description":"Value","Maximum Continuous Drain Current":"11.3 A","Package":"8TSDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"6 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"125@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3 ns"}...
1524 Bytes - 05:22:45, 18 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| BSZ12DN20NS3G.pdf | 0.66 | 1 | Request |
