Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-99, 8 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"150","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.0500 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"8"}...

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-78, 8 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.0500 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","N...

{"@I(C) (A) (Test Condition)":"1.0m","I(CBO) Max. (A)":"10u","Number of Devices":"2","Type (NPN\/PNP)":"PNP","h(FE) Max. Current gain.":"450","h(FE) Min. Static Current Gain":"150","@V(CE) (V) (Test Condition)":"5.0","P(D) Max.(W) Power Dissipation":"0.6","V(BR)CEO (V)":"60","Semiconductor Material":"Silicon","@V(CBO) (V) (Test Condition)":"50","Military":"N","V(BR)CBO (V)":"60","Package":"Chip","I(C) Abs.(A) Collector Current":"50m","Emitter-Base Diode (Y\/N)":"No"}...

{"@I(C) (A) (Test Condition)":"1.0m","I(CBO) Max. (A)":"10u","Number of Devices":"2","Type (NPN\/PNP)":"PNP","h(FE) Max. Current gain.":"450","h(FE) Min. Static Current Gain":"150","@V(CE) (V) (Test Condition)":"5.0","P(D) Max.(W) Power Dissipation":"0.6","V(BR)CEO (V)":"60","Semiconductor Material":"Silicon","@V(CBO) (V) (Test Condition)":"50","Military":"N","V(BR)CBO (V)":"60","Package":"Chip","I(C) Abs.(A) Collector Current":"50m","Emitter-Base Diode (Y\/N)":"No"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL PACKAGE-6","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.0500 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Po...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL PACKAGE-6","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.0500 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Po...

{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Collector Current-Max (IC)":"0.0500 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"60 V","Terminal Position":"BOTTOM","Transistor Application":"A...

{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Collector Current-Max (IC)":"0.0500 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"60 V","Terminal Position":"BOTTOM","Transistor Application":"A...

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"CASE 654-07, 6 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"150","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Collector Current-Max (IC)":"0.0500 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SEPARATE, 2 ELEMENTS","Transis...

{"P(D) Max.(W) Power Dissipation":"0.6","V(BR)CBO (V)":"60","h(FE) Min. Static Current Gain":"150","Type (NPN\/PNP)":"PNP","I(C) Abs.(A) Collector Current":"50m","h(FE) Max. Current gain.":"450","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10u","Number of Devices":"2","Package":"TO-78","Emitter-Base Diode (Y\/N)":"No","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JAN2N3810","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...

{"P(D) Max.(W) Power Dissipation":"0.6","V(BR)CBO (V)":"60","h(FE) Min. Static Current Gain":"150","Type (NPN\/PNP)":"PNP","I(C) Abs.(A) Collector Current":"50m","h(FE) Max. Current gain.":"450","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10u","Number of Devices":"2","Package":"TO-78","Emitter-Base Diode (Y\/N)":"No","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JANS2N3810","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...

{"P(D) Max.(W) Power Dissipation":"0.6","V(BR)CBO (V)":"60","h(FE) Min. Static Current Gain":"150","Type (NPN\/PNP)":"PNP","I(C) Abs.(A) Collector Current":"50m","h(FE) Max. Current gain.":"450","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10u","Number of Devices":"2","Package":"TO-78","Emitter-Base Diode (Y\/N)":"No","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JANTX2N3810","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...